HGTG30N60C3D 查看數據表（PDF） - Fairchild Semiconductor
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HGTG30N60C3D
Fairchild Semiconductor
HGTG30N60C3D Datasheet PDF : 9 Pages
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HGTG30N60C3D
Typical Performance Curves (Continued)
8.0
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
7.0
6.0
5.0
VGE = 10V
4.0
3.0
2.0
1.0
VGE = 15V
0
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
500
TJ = 150oC, TC = 75oC
RG = 3Ω, L = 100µH
100
VGE = 15V
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
10 fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 0.6oC/W
VGE = 10V
1
5
10
20
30 40
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
6.0
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
5.0
4.0
VGE = 10V or 15V
3.0
2.0
1.0
0
10
20
30
40
50
60
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
250 TJ = 150oC, VGE = 15V, L = 100µH
200
150
LIMITED BY
100
CIRCUIT
50
0
0
100
200
300
400
500
600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
8000
7000
6000
5000
4000
3000
2000
1000
0
0
FREQUENCY = 400kHz
CIES
COES
CRES
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
IG (REF) = 3.54mA, RL = 20Ω, TC = 25oC
600
15
480
12
VCE = 600V
360
9
240
VCE = 400V
6
VCE = 200V
120
3
0
0
0
40
80
120
160
200
QG, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
©2009 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
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