HGTG30N60C3D 查看數據表（PDF） - Fairchild Semiconductor
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HGTG30N60C3D
Fairchild Semiconductor
HGTG30N60C3D Datasheet PDF : 9 Pages
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HGTG30N60C3D
Typical Performance Curves (continued)
500
10µs
100
100µs
1ms
10
10ms
DC
1
*Notes:
0.1 1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Figure 17. SOA Characteristics
100
0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
10-5
t1
PD
t2
SINGLE PULSE
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-4
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
Figure 18. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
©2009 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
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