HGT1S12N60C3 查看數據表（PDF） - Harris Semiconductor
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HGT1S12N60C3 Datasheet PDF : 6 Pages
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HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
Typical Performance Curves (Continued)
200
100
VGE = 10V
TJ = 150oC, TC = 75oC
RG = 25Ω, L = 100µH
VGE = 15V
10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 1.2oC/W
1
5
10
20
30
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
100
TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH
80
60
LIMITED BY
CIRCUIT
40
20
0
0
100
200
300
400
500
600
VCE(PK), COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
2500
2000
CIES
FREQUENCY = 1MHz
1500
1000
500
CRES
COES
0
0
5
10
15
20
25
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
600
IG REF = 1.276mA, RL = 50Ω, TC = 25oC 15
480
12
VCE = 600V
360
9
240
6
VCE = 400V
VCE = 200V
120
3
0
0
0
10
20
30
40
50
60
QG, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
100
0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
10-5
SINGLE PULSE
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
3-33
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