HUFA76413DK8T 查看數據表（PDF） - Fairchild Semiconductor
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HUFA76413DK8T Datasheet PDF : 11 Pages
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Typical Characteristics TA = 25°C unless otherwise noted
1.2
1.2
VGS = VDS, ID = 250µA
ID = 250µA
1.0
1.1
0.8
1.0
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
2000
1000
CISS = CGS + CGD
10
VDD = 30V
8
CRSS = CGD
100
COSS ≅ CDS + CGD
VGS = 0V, f = 1MHz
10
0.1
1
10
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
6
4
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 4.8A
ID = 1A
5
10
15
20
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
150
VGS = 5V, VDD = 30V, ID = 1A
100
td(OFF)
tf
50
tr
td(ON)
0
0
10
20
30
40
50
RGS, GATE TO SOURCE RESISTANCE (Ω)
Figure 15. Switching Time vs Gate Resistance
©2003 Fairchild Semiconductor Corporation
Rev. B
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