Q67100-Q2039 查看數據表（PDF） - Siemens AG

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产品描述 (功能)

生产厂家

Q67100-Q2039

4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM

Siemens AG 

4M x 1-Bit Dynamic RAM

Low Power 4M x 1-Bit Dynamic RAM

HYB 314100BJ/BJL -50/-60/-70

Advanced Information

• 4 194 304 words by 1-bit organization

• 0 to 70 ˚C operating temperature

• Fast Page Mode Operation

• Performance:

tRAC RAS access time

tCAC CAS access time

tAA

Access time from address

tRC

Read/Write cycle time

tPC

Fast page mode cycle time

-50 -60 -70

50 60 70 ns

13 15 20 ns

25 30 35 ns

95 110 130 ns

35 40 45 ns

• Single + 3.3 V (± 0.3 V ) supply with a built-in Vbb generator

• Low power dissipation

max. 252 mW active (-50 version)

max. 216 mW active (-60 version)

max. 198 mW active (-70 version)

• Standby power dissipation:

7.2 mW max. standby (TTL)

3.6 mW max. standby (CMOS)

720 µW max. standby (CMOS) for Low Power Version

• Output unlatched at cycle end allows two-dimensional chip selection

• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,

hidden refresh and test mode capability

• All inputs and outputs TTL-compatible

• 1024 refresh cycles / 16 ms

• 1024 refresh cycles / 128 ms Low Power Version

• Plastic Packages: P-SOJ-26/20-5 with 300 mil width

Semiconductor Group

1

4.96

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