Q67100-Q2039 查看數據表（PDF） - Siemens AG

零件编号

产品描述 (功能)

生产厂家

Q67100-Q2039

4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM

Siemens AG 

HYB 314100BJ/BJL-50/-60/-70

3.3V 4M x 1 DRAM

DC Characteristics (cont’d)

TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3.3 V ± 0.3 V , tT = 5 ns

Parameter

Symbol Limit Values

min.

max.

Average VCC supply current during

CAS before RAS refresh mode

-50 version

-60 version

-70 version

ICC6

–

70

–

60

–

55

For Low Power Version only:

ICC7

–

250

Battery backup current (average power supply

current in battery backup mode):

(CAS = CAS before RAS cycling or 0.2 V,

WE = VCC – 0.2 V or 0.2 V,

A0 to A10 = VCC – 0.2 V or 0.2 V;

DI = VCC – 0.2 V or 0.2 V or open,

tRC = 125 µs, tRAS = tRAS min = 1 µs)

Unit Test

Condition

mA 2)4)

µA –

Capacitance

TA = 0 to 70 ˚C; VCC = 3.3 V ± 0.3 V; f = 1 MHz

Parameter

Symbol

Limit Values

Unit

min.

max.

Input capacitance (A0 to A10, DI)

Input capacitance (RAS, CAS, WE)

Output capacitance (DO)

CI1

–

5

pF

CI2

–

7

pF

CIO

–

7

pF

Semiconductor Group

6

Share Link: