HYB314265BJ-45 查看數據表（PDF） - Siemens AG

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HYB314265BJ-45

256K x 16-Bit EDO-Dynamic RAM

Siemens AG 

HYB 5(3)14265BJ(L)-400/-40/-45/-50

256K x 16 EDO-DRAM

AC Characteristics 5)6)

TA = 0 to 70 ˚C, tT = 2 ns

Parameter

16E

Symbol

Limit Values

Unit Note

-45

-50

min. max. min. max.

Common Parameters

Random read or write cycle time

RAS precharge time

RAS pulse width

CAS pulse width

CAS precharge time

Row address setup time

Row address hold time

Column address setup time

Column address hold time

RAS to CAS delay time

RAS to column address delay

RAS hold time

CAS hold time

CAS to RAS precharge time

Transition time (rise and fall)

Refresh period

Refresh period (L-version only)

tRC

79 –

89 –

ns

tRP

30 –

35 –

ns

tRAS

45 10k 50 10k ns

tCAS

7

10k 8

10k ns

tCP

7

–

8

–

ns

tASR

0

–

0

–

ns

tRAH

7

–

8

–

ns

tASC

0

–

0

–

ns

tCAH

7

–

8

–

ns

tRCD

11

33

12

37

ns

tRAD

9

23 10 25 ns

tRSH

12

13 –

ns

tCSH

36

40 –

ns

tCRP

5

–

5

–

ns

tT

1

50 1

50 ns 7

tREF

–

16 –

16 ms

tREF

–

128 –

128 ms

Read Cycle

Access time from RAS

tRAC

–

45 –

50 ns 8, 9

Access time from CAS

tCAC

–

12 –

13 ns 8, 9

Access time from column address

tAA

–

22 –

25 ns 8,10

OE access time

tOEA

–

12 –

13 ns

Column address to RAS lead time

tRAL

23 –

25 –

ns

Read command setup time

tRCS

0

–

0

–

ns

Read command hold time

tRCH

0

–

0

–

ns 11

Read command hold time referenced to RAS tRRH 0

–

0

–

ns 11

CAS to output in low-Z

tCLZ

0

–

0

–

ns 8

Semiconductor Group

11

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