HYB314265BJ-45 查看數據表（PDF） - Siemens AG
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HYB314265BJ-45 Datasheet PDF : 28 Pages
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HYB 5(3)14265BJ(L)-400/-40/-45/-50
256K x 16 EDO-DRAM
Absolute Maximum Ratings
Operating temperature range ........................................................................................ 0 to + 70 °C
Storage temperature range..................................................................................... – 55 to + 150 °C
Input/output voltage for HYB 514265................................................ – 0.5 to min. (VCC + 0.5, 7.0) V
Power supply voltage for HYB 514265 ........................................................................... – 1 to + 7 V
Input/output voltage for HYB 314265................................................ – 0.5 to min. (VCC + 0.5, 4.6) V
Power supply voltage for HYB 314265 ..................................................................... – 0.5 to + 4.6 V
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics for HYB514265
TA = 0 to 70 °C; VSS = 0 V; VCC = 5 V ± 10 % (± 5 % for -400 version) , tT = 2 ns
Parameter
Input high voltage
Input low voltage
Output high voltage (IOUT = – 5.0 mA)
Output low voltage (IOUT = 4.2 mA)
Input leakage current, any input
(0 V < VIN < 7 V, all other inputs = 0 V)
Output leakage current
(DO is disabled, 0 V < VOUT < VCC)
Average VCC supply current:
-400 version
-40 version
-45 version
-50 version
Standby VCC supply current
(RAS = LCAS = UCAS = WE = VIH)
Average VCC supply current during RAS-only
refresh cycles:
-400 version
-40 version
-45 version
-50 version
Symbol Limit Values
min. max.
VIH
2.4
VCC + 0.5
VIL
– 0.5 0.8
VOH
2.4
–
VOL
–
0.4
II(L)
– 10 10
Unit Notes
V1
V1
V1
V1
µA 1
IO(L)
– 10 10
µA 1
ICC1
–
ICC2
–
120
mA 2, 3, 4
120
105
95
2
mA –
ICC3
–
120
mA 2, 4
120
105
95
Semiconductor Group
5
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