HYB3165805TL-60 查看數據表（PDF） - Siemens AG
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HYB3165805TL-60 Datasheet PDF : 32 Pages
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HYB3164(5)805J/T(L)-50/-60
8M x 8 EDO-DRAM
AC Characteristics 5)6)
TA = 0 to 70 ˚C,VCC = 3.3 V ± 0.3V , tT = 2 ns
Parameter
Symbol
Limit Values
-50
-60
min. max. min. max.
Unit Note
common parameters
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay time
RAS hold time
CAS hold time
CAS to RAS precharge time
Transition time (rise and fall)
Refresh period for HYB3164805
Refresh period for HYB3165805
tRC
84
tRP
30
tRAS
50
tCAS
8
tASR
0
tRAH
8
tASC
0
tCAH
8
tRCD
12
tRAD
10
tRSH
8
tCSH
45
tCRP
5
tT
1
tREF
–
tREF
–
Read Cycle
Access time from RAS
tRAC
–
Access time from CAS
tCAC
–
Access time from column address
tAA
–
OE access time
tOEA
–
Column address to RAS lead time
tRAL
25
Read command setup time
tRCS
0
Read command hold time
tRCH
0
Read command hold time referenced to tRRH
0
RAS
–
104
–
40
100k 60
10k 10
–
0
–
10
–
0
–
10
37
14
25
12
10
50
–
5
50
1
128 –
64
–
–
–
100k
10k
–
–
–
–
45
30
–
–
–
50
128
64
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns 7
ms
ms
50
–
60
13
–
15
25
–
30
13
–
15
–
30
–
–
0
–
–
0
–
–
0
–
ns 8, 9
ns 8, 9
ns 8,10
ns
ns
ns
ns 11
ns 11
Semiconductor Group
157
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