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HYM322005GS-50 查看數據表(PDF) - Siemens AG

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HYM322005GS-50 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
2M × 32-Bit Dynamic RAM Module
(Hyper Page Mode - EDO Version)
HYM 322005S/GS-50/-60
SIMM modules with 2 097 152 words by 32-bit organization
for PC main memory application
Fast access and cycle time
50 ns access time
84 ns cycle time (-50 version)
60 ns access time
104 ns cycle time (-60 version)
Hyper page mode - EDO capability with
20 ns cycle time (-50 version)
25 ns cycle time (-60 version)
Single + 5 V (± 10 %) supply
Low power dissipation
max. 2200 mW active (-50 version)
max. 1980 mW active (-60 version)
CMOS – 22 mW standby
TTL – 44 mW standby
CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh
4 decoupling capacitors mounted on substrate
All inputs, outputs and clock fully TTL compatible
72 pin Single in-Line Memory Module
Utilizes four 1M × 16 -DRAMs in SOJ-42 packages
1024 refresh cycles / 16 ms
Optimized for use in byte-write non-parity applications
Tin-Lead contact pad HYM 322005S
Gold-Lead contact pad HYM 322005GS
single sided module with 20.32 mm (800 mil) height
Semiconductor Group
1
9.96

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