HYM64V2005GU-50 查看數據表（PDF） - Siemens AG

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HYM64V2005GU-50

3.3V 2M × 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module

Siemens AG 

HYM 64(72)V2005GU-50/-60

2M x 64/72 DRAM Module

DC Characteristics (contd’ )

TA = 0 to 70 °C; VCC = 3.3 V ± 0.3 V

Parameter

Symbol

x 64

min. max.

Average VCC supply current:

ICC1

-50 version

-60 version

–

960

–

880

x 72

Unit Note

min. max.

s

–

1080 mA 2) 3)

–

990 mA 4)

(RAS, CAS, address cycling,

tRC = tRC min.)

Standby VCC supply current

ICC2

(RAS = CAS = VIH, one address change)

Average VCC supply current during RAS ICC3

only refresh cycles:

-50 version

-60 version

–

16

–

18 mA –

2) 4)

–

960

– 1080 mA

–

880

–

990 mA

(RAS cycling, CAS = VIH , tRC = tRC min.)

Average VCC supply current during

ICC4

hyper page mode (EDO):

-50 version

-60 version

–

320

–

360 mA 2) 3)

–

280

–

315 mA 4)

(RAS = VIL, CAS, address cycling

tPC = tPC min.)

Standby VCC supply current

ICC5

(RAS = CAS = VCC – 0.2 V, one address

change)

Average VCC supply current during

ICC6

CAS-before-RAS refresh mode:

-50 version

-60 version

–

8

–

9 mA –

–

960

–

1080 mA 2) 4)

–

880

–

990 mA

(RAS, CAS cycling, tRC = tRC min.)

Semiconductor Group

8

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