HYS64V2100GU-10 查看數據表（PDF） - Siemens AG
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HYS64V2100GU-10 Datasheet PDF : 12 Pages
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HYS64(72)V2100G(C)U-10
2M x 64/72 SDRAM-Module
DC Characteristics
TA = 0 to 70 °C; VSS = 0 V; V V DD, DDQ = 3.3 V ± 0.3 V
Parameter
Input high voltage
Input low voltage
Output high voltage (IOUT = – 2.0 mA)
Output low voltage (IOUT = 2.0 mA)
Input leakage current, any input
(0 V < VIN < 3.6 V, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V < VOUT < VCC)
Symbol
VIH
VIL
VOH
VOL
II(L)
IO(L)
Limit Values
Unit
min.
max.
2.0
Vcc+0.3 V
– 0.5
0.8 V
2.4
–
V
–
0.4 V
– 40
40 µA
– 40
40 µA
Capacitance
TA = 0 to 70 °C; VDD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Input capacitance (A0 to A10, BS, RAS, CAS, WE)
CI1
Input capacitance ( CS0 - CS3)
CI2
Input capacitance (CLK0 - CLK3)
CI3
Input capacitance (DQMB0 - DQMB7)
CI4
Input / Output capacitance (DQ0-DQ63,CB0-CB7) CIO
Input Capacitance (SCL,SA0-2)
Csc
Input/Output Capacitance
Csd
Limit Values
Unit
min.
(x64)
max.
(x72)
45
55 pF
20
25 pF
22
38 pF
13
13 pF
12
12 pF
8
8
pF
10
10 pF
Semiconductor Group
5
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