HYS64V2100GU-10 查看數據表（PDF） - Siemens AG

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HYS64V2100GU-10

3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module

Siemens AG 

HYS64(72)V2100G(C)U-10

2M x 64/72 SDRAM-Module

AC Characteristics 3)4)

TA = 0 to 70 °C; VSS = 0 V; VCC = 3.3 V ± 0.3 V, tT = 1 ns

Parameter

Symbol

Limit Values

-10

min

max

Unit Note

Clock and Clock Enable

Clock Cycle Time

tCK

CAS Latency = 3

10

ns

CAS Latency = 2

15

ns

CAS Latency = 1

30

ns

System Frequency

fCK

CAS Latency = 3

CAS Latency = 2

CAS Latency = 1

–

100 MHz

–

66 MHz

–

33 MHz

Clock Access Time

tAC

CAS Latency = 3

CAS Latency = 2

CAS Latency = 1

–

8

ns 5

–

9

ns

–

27 ns

Clock High Pulse Width

tCH

3.5

Clock Low Pulse Width

tCL

3.5

CKE Setup Time

tCKS

3

CKE Hold Time

tCKH

1

CKE Setup Time (Power down mode) tCKSP

3

CKE Setup Time (Self Refresh Exit) tCKSR

8

Transition time (rise and fall)

tT

1

–

ns

–

ns

–

ns 6

–

ns 6

–

ns 6

–

ns 8

30 ns

Common Parameters

Command Setup time

Command Hold Time

Address Setup Time

Address Hold Time

RAS to CAS delay

Cycle Time

Active Command Period

Precharge Time

tCS

3

–

ns 6

tCH

1

–

ns 6

tAS

3

–

ns 6

tAH

1

–

ns 6

tRCD

30

–

ns

tRC

75

120k ns

tRAS

45

120k ns

tRP

30

–

ns

Semiconductor Group

7

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