HYS64V2200GU-8 查看數據表（PDF） - Siemens AG

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HYS64V2200GU-8

3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module

Siemens AG 

3.3V 2M x 64/72-Bit 1 BANK SDRAM Module

3.3V 4M x 64/72-Bit 2 BANK SDRAM Module

168 pin unbuffered DIMM Modules

HYS64/72V2200GU-8/-10

HYS64/72V4220GU-8/-10

• 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules

for PC main memory applications

• 1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation

• Optimized for byte-write non-parity or ECC applications

• JEDEC standard Synchronous DRAMs (SDRAM)

• Fully PC board layout compatible to INTELs’ Rev. 1.0 module specification

• SDRAM Performance:

fCK

Clock frequency (max.)

tAC

Clock access time

• Programmed Latencies :

-8

-8-3

-10

100

100

66

6

6

8

Units

MHz

ns

Product Speed

CL

-8

PC100

2

-8-3

PC100

3

-10

PC66

2

tRCD

tRP

2

2

2

3

2

2

• Single +3.3V(± 0.3V ) power supply

• Programmable CAS Latency, Burst Length and Wrap Sequence

(Sequential & Interleave)

• Auto Refresh (CBR) and Self Refresh

• Decoupling capacitors mounted on substrate

• All inputs, outputs are LVTTL compatible

• Serial Presence Detect with E2PROM

• Utilizes 2M x 8 SDRAMs in TSOPII-44 packages

• 4096 refresh cycles every 64 ms

• 133,35 mm x 31.75 mm x 4,00 mm card size with gold contact pads

Semiconductor Group

1

6.98

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