HYS64V2200GU-8-3 查看數據表（PDF） - Siemens AG
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HYS64V2200GU-8-3
Siemens AG
HYS64V2200GU-8-3 Datasheet PDF : 17 Pages
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HYS64(72)V2200/4220GU-8/-10
SDRAM-Modules
DC Characteristics
TA = 0 to 70 °C; VSS = 0 V; V V DD, DDQ = 3.3 V ± 0.3 V
Parameter
Input high voltage
Input low voltage
Output high voltage (IOUT = – 2.0 mA)
Output low voltage (IOUT = 2.0 mA)
Input leakage current, any input
(0 V < VIN < 3.6 V, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V < VOUT < VCC)
Symbol
VIH
VIL
VOH
VOL
II(L)
IO(L)
Limit Values
Unit
min.
max.
2.0
Vcc+0.3 V
– 0.5
0.8 V
2.4
–
V
–
0.4 V
– 40
40 µA
– 40
40 µA
Capacitance
TA = 0 to 70 °C; VDD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Input capacitance
(A0 to A10, BA, RAS, CAS, WE)
Input capacitance (CS0 -CS3 )
Input capacitance (CLK0 - CLK3)
Input capacitance (CKE0, CKE1)
Input capacitance (DQMB0 - DQMB7)
Input / Output capacitance
(DQ0-DQ63,CB0-CB7)
Input Capacitance (SCL,SA0-2)
Input/Output Capacitance
Symbol
Limit Values
Unit
max. max. max. max.
2Mx64 2Mx72 4Mx64 4Mx72
CI1
45
55
80
90 pF
CI2
20
25
30
35 pF
CICL
22
38
22
38 pF
CI3
22
38
50
55 pF
CI4
13
13
20
20 pF
CIO
13
12
20
20 pF
Csc
8
8
8
8 pF
Csd
10
10
10
10 pF
Semiconductor Group
6
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