IHW30N90T(2006) 查看數據表（PDF） - Infineon Technologies

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IHW30N90T
(Rev.:2006)

Soft Switching Series

Infineon Technologies 

Soft Switching Series

IHW30N90T

q

5mJ

4mJ

3mJ

Eoff

2mJ

1mJ

0mJ

10A 20A 30A 40A 50A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, RG=15Ω,

Dynamic test circuit in Figure E)

6 mJ

Eoff

5 mJ

4 mJ

3 mJ

2 mJ

1 mJ

0 mJ

10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, IC=30A,

Dynamic test circuit in Figure E)

2.0m J

Eoff

1.5m J

1.0m J

0.5m J

0.0m J

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=30A, RG=15Ω,

Dynamic test circuit in Figure E)

3.0mJ

2.5mJ

2.0mJ

Eoff

1.5mJ

1.0mJ

0.5mJ

0.0mJ

400V

500V

600V

700V

800V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ=175°C,

VGE=0/15V, IC=30A, RG=15Ω,

Dynamic test circuit in Figure E)

Power Semiconductors

7

Rev. 2.1 Apr 06

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