IL485 查看數據表（PDF） - Siemens AG

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IL485

OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER

Siemens AG 

IL485

OPTICALLY COUPLED

HIGH SPEED MOSFET DRIVERS

OPTOCOUPLER

FEATURES

• Fast Turn On

• Fast Turn Off

• Low Input Current

• Isolation Test Voltage, 5300 VACRMS

APPLICATIONS

• Motor Drive Controls

• IGBT-predrivers

• AC/DC Power Inverters

DESCRIPTION

The IL485 is a photovoltatic generator (optically cou-

pled) designed to drive highly capacitive loads such

as the gate of a power MOSFET transistor and at the

same time provide isolation and floating voltage sup-

ply capability. The coupler consists of a GaAlAs light

emitting diode as input control and a custom photo IC

chip with photodiode arrary (PDA) as output device.

When the LED is turned on, the emitted light pro-

duces a voltage in the PDA. The output of the PDA is

used to drive the gate of a power MOSFET. The photo

IC chip contains additional circuitry to enhance the

switching speeds, (both turn on turn off). The opto-

coupler is packaged in a 6 pin DIP.

Dimensions in inches (mm)

Pin One ID.

321

A1

.248 (6.30)

.256 (6.50)

K2

6 –out

5B

.039

(1.00)

Min.

4°

Typ.

.018 (0.45)

.022 (0.55)

4 56

.335 (8.50)

.343 (8.70)

.130 (3.30)

.150 (3.81)

.020 (.051) Min.

.031 (0.80)

.035 (0.90)

.100 (2.54) Typ.

3

.300 (7.62)

Typ.

18° Typ.

.010 (.25)

.014 (.35)

.300 (7.62)

.347 (8.82)

4 +out

.110 (2.79)

.150 (3.81)

Maximum Ratings

Emitter

Reverse Voltage ..................................................................................4 V

Forward Current ..............................................................................60 mA

Peak Forward Current....................................................................600 mA

Power Dissipation.........................................................................100 mW

Thermal Resistance....................................................................700 °C/W

Detector

Breakdown Voltage (pin 5 to 6) ........................................................300 V

Peak Input Current (pin 5 to 4) ........................................................50 mA

Reverse Current (pin 5 to 6, V=100 V) ...........................................200 nA

Power Dissipation (pin 5 to 4) ......................................................150 mW

Package

Insulation Thickness between Emitter and Detector ...................≥0.4 mm

Isolation Test Voltage (1 sec.)..............................................5300 VACRMS

Isolation Resistance

VIO=500 V, TA=25°C..................................................................≥1012 Ω

VIO=500 V, TA=100°C...............................................................≥1011 Ω

Comparative Tracking Index per

DIN IEC 112/VDE 303, Part 1.........................................................≥175

Total Power Dissipation ................................................................250 mW

Storage Temperature Range ..........................................–55°C to +150°C

Operating Temperature Range.......................................–55°C to +100°C

Junction Temperature ...................................................................... 100°C

Soldering Temperature (max. 10 sec.,

dip soldering distance to seating plane >1.5 mm)...................... 260°C

5–1

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