ILH100 查看數據表（PDF） - Siemens AG
零件编号
产品描述 (功能)
生产厂家
ILH100 Datasheet PDF : 7 Pages
| |||
Characteristics (TΑ=25°C, unless otherwise specified)
Parameter
Symbol Min.
Emitter
Forward Voltage
Reverse Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector
VF
VBR
6
IR
CJ
RTH
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Emitter Leakage Current
DC Forward Current Gain
VCE(sat)
VBE
ICEO
HFE
250
Saturated DC Forward Gain
HFE(sat) 125
Capacitance
CCE
CCB
CEB
Thermal Resistance
RTH
Coupled Characteristics (-55°C to 100° C)
Saturated Current Transfer Ratio
CTR(sat) 70
Current Transfer Ratio, Collector-Emitter
CTEce
100
Current Transfer Ratio, Collector-Base
CTRcb
0.4
Isolation and Insulation
Common Mode Rejection Output High
CMH
1000
Common Mode Rejection Output High
CML
1000
Package Capacitance
Insulation Resistance
Leakage Current, Input-Output
CIO
RIO
1011
IIO
Typical Switching Speeds (TA=25°C)
Non-Saturated Switching
Symbol
Delay
td
Rise
tr
Storage
ts
Fall
tf
Propagation-High to Low
tpHL
Propagation-Low to High
Saturated Switching(1)
tpLH
Delay
td
Rise
tr
Storage
ts
Fall
tf
Propagation-High to Low
tpHL
Propagation-Low to High
tpLH
Typ.
0.8
2
0.4
2
1
1.5
0.7
1
13.5
12
1.4
15
Typ. Max.
1.45
1.7
0.01
10
20
220
0.25
0.4
0.65
5
50
400
750
200
325
6.8
8.5
11
220
210
250
300
450
0.7
0.9
2000
2000
1.5
1014
10
Max.
2
5
1.5
5
3
4
2
3
30
30
5
40
Unit Condition
V
V
µA
pF
°C/W
IF=60 mA
IR=10 µA
VR=6 V
VF=0 V, f=1 MHz
Junction to Lead
V
V
nA
pF
pF
pF
°C/W
IB=20µA, ICE=1 mA
IB=20µA
VCE=10 V
VCE=10 V, IB=20µA
VCE=0.4 V, IB=20µA
VCE=5 V, f=1 MHz
Junction to Lead
%
%
%
V/µs
V/µs
pF
Ω
µA
IF=10 mA VCE=0.4 V
IF=10 mA, VCE=10 V
IF=10 mA, VCB=9.3 V
VCM=500 Vp-p, VCC=5 V, RL=1 KΩ,
IF=0 mA
VCM=500 Vp-p, VCC=5 V, RL=1 KΩ,
IF=10 mA
VIO=0 V, 1 MHz
VIO=500 VDC
Relative Humidity ≤50%,
VIO 3000 VDC, 5 sec.
Unit
Test Condition
µs
µs
VCC=5 V
µs
RL=75 Ω
µs
IF=10 mA
µs
50% of VPP
µs
RBE=open
µs
VCE=0.4 V
µs
VCE=0.4 V
µs
RL=1 KΩ
µs
IF=10 mA
µs
VCC=5 V,
VTH=1.5 V
µs
RBE=open
ILH100
5–2
Share Link: 