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2N6760 Datasheet PDF : 3 Pages
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N-CHANNEL
POWER MOSET
IRF330 / 2N6760
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
BVDSS
∆BVDSS
∆TJ
RDS(on)
Drain-Source Breakdown
Voltage
Temperature Coefficent of
Breakdown Voltage
Static Drain-Source
On-State Resistance
VGS = 0
Reference
to 25°C
VGS = 10V
VGS = 10V
ID = 1.0mA
ID = 1.0mA
ID = 3.5A (4)
ID = 5.5A (4)
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
VDS = VGS
VDS ≥ 15V
ID = 250µA
I DS = 3.5A (4)
IDSS
Zero Gate Voltage
Drain Current
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
IGSS
Forward Gate-Source
Leakage
VGS = 20V
IGSS
Reverse Gate-Source
Leakage
VGS = -20V
Min. Typ. Max. Units
400
V
0.46
V/°C
1.0
Ω
1.22
2
4
V
2.9
S(Ʊ)
25
µA
250
100
nA
-100
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Crss
Qg
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
VGS = 0
VDS = 25V
f = 1.0MHz
VGS = 10V
ID = 5.5A
VDS = 0.5BVDSS
VDD = 200V
ID = 5.5A
RG = 7.5Ω
620
200
pF
75
17
39
2
6
nC
8
20
30
40
ns
80
35
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current (1)
VSD
Diode Forward Voltage
IS = 5.5A
VGS = 0 (4)
trr
Reverse Recovery Time
IF = 5.5A
Qrr
Reverse Recovery Charge
VDD ≤ 50V
TJ = 25°C
TJ = 25°C
di/dt = 100A/µs (4)
5.5
A
22
1.4
V
700
ns
6.2
µC
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 9142
Website: http://www.semelab-tt.com
Issue 1
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