IRF630 查看數據表（PDF） - Advanced Power Electronics Corp
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IRF630 Datasheet PDF : 4 Pages
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16
T C =25 o C
12
10V
8.0V
7.0V
8
6.0V
4
V G =5.0V
0
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
8
T j = 150 o C
T j = 25 o C
6
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
IRF630
12
T C =150 o C
10
10V
8 .0V
7 .0V
8
6
6.0 V
4
V G =5 .0V
2
0
0
2
4
6
8
10
12
14
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =5.4A
V G =10V
2
1
0
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1
0.8
0.6
0.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
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