IRF630 查看數據表（PDF） - Comset Semiconductors
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IRF630 Datasheet PDF : 3 Pages
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SEMICONDUCTORS
IRF630
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
VDSS
VGS(th)
IDSS
IGSS
RDS(on)
Drain-Source Breakdown
Voltage
Gate-threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source leakage Current
Drain-Source on Resistance
ID= 250 µA, VGS= 0 V
ID=1 mA, VGS= VDS
VDS= 200 V, VGS= 0 V
Tj= 25 °C
VDS= 200 V, VGS= 0 V
Tj= 125 °C
VGS= 20 V, VDS= 0 V
ID= 5.4 A, VGS= 10 V
200 -
-
V
2
3
4
V
-
- 10
µA
-
- 50
-
- 100 nA
- 0.35 0.4 Ω
DYNAMIC CHARACTERISTICS
Symbol
Ratings
gfs
CISS
COSS
CRSS
td(on)
tr
td(off)
tf
Transconductance
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
Turn-on Delay Time
Rise time
Turn-off Delay Time
Fall Time
REVERSE DIODE
Test Condition(s) Min Typ Max Unit
VDS = 2*ID*RDS(on)max
ID= 5 A
VGS= 0 V, VDS= 25 V
f= 1MHz
VDD= 100 V, VGS= 10 V
ID= 4.5 A, RGS= 4.7 Ω
3
4
-
S
- 540 700
-
90 120 pF
- 35 50
- 10 -
-
-
15
25
-
-
ns
- 15 -
Symbol
Ratings
IS
Inverse Diode Continuous
Forward Current.
ISM
Inverse diode direct current,
pulsed.
VSD
Inverse Diode Forward voltage
Trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Condition(s)
TC = 25°C
TC = 25°C
VGS = 0 V, IF = 9 A
VR = 50 V, IF = 9 A
di/dt = 100 A/µs
TC = 150°C
Min Typ Max Unit
-
-
9
A
-
- 36
-
-
2
V
- 170 - ns
- 0.95 - µC
MECHANICAL DATA CASE TO-220
01/10/2012
COMSET SEMICONDUCTORS
2/3
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