IRF730A 查看數據表（PDF） - Vishay Semiconductors
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IRF730A Datasheet PDF : 8 Pages
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IRF730A, SiHF730A
Vishay Siliconix
100000
10000
1000
100
VGS = 0 V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
10
Crss
1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = 5.5 A
16
VDS = 320 V
VDS = 200 V
VDS = 80 V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
5
10
15
20
25
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.4
VGS = 0 V
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10 us
10
100 us
1 ms
1
10 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91045
S-Pending-Rev. A, 19-Jun-08
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