IRFB13N50APBF(2008) 查看數據表（PDF） - Vishay Semiconductors
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IRFB13N50APBF Datasheet PDF : 8 Pages
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IRFB13N50A, SiHFB13N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
81
20
36
Single
D
TO-220
0.450
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Lower Gate Charge Qg Results in Simpler Drive
Reqirements
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supplies
• High Speed Power Switching
TO-220
IRFB13N50APbF
SiHFB13N50A-E3
IRFB13N50A
SiHFB13N50A
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
TC = 25 °C
VGS at 10 V
ID
TC = 100 °C
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
EAS
Avalanche Currenta
IAR
Repetitive Avalanche Energya
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 5.7 mH, RG = 25 Ω, IAS =14 A, dV/dt = 7.6 V/ns (see fig. 12a).
c. ISD ≤ 14 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91095
S-81393-Rev. A, 07-Jul-08
LIMIT
500
± 30
14
9.1
56
2.0
560
14
25
250
9.2
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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