IRFB13N50APBF 查看數據表（PDF） - Vishay Semiconductors
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IRFB13N50APBF Datasheet PDF : 10 Pages
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IRFB13N50A, SiHFB13N50A
Vishay Siliconix
105
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
104
Crss = Cgd
Ciss Coss = Cds + Cgd
103
Coss
102
Crss
10
1
1
91095_05
10
102
103
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
102
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.2
91095_07
VGS = 0 V
0.5
0.8
1.1
1.4
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
12.5
10
7.5
ID = 14 A
VDS = 400 V
VDS = 250 V
VDS = 100 V
5
2.5
0
0
91095_06
12
24
36
48
60
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
103
Operation in this area limited
by RDS(on)
102
10
100 µs
1 ms
1
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
10 ms
10
102
103
104
91095_08
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91095
S11-0514-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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