IRFP23N50LPBF(2011) 查看數據表（PDF） - Vishay Semiconductors
零件编号
产品描述 (功能)
生产厂家
IRFP23N50LPBF Datasheet PDF : 11 Pages
| |||
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
RthJA
RthCS
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.34
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 14 Ab
VDS = 50 V, ID = 14 Ab
500
-
-
V
-
0.27
-
V/°C
3.0
-
5.0
V
-
-
± 100 nA
-
-
50
μA
-
-
2.0 mA
-
0.190 0.235
12
-
-
S
Input Capacitance
Ciss
VGS = 0 V,
-
Output Capacitance
Coss
VDS = 25 V,
-
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
-
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Coss
Coss eff.
VDS = 1.0 V , f = 1.0 MHz -
VDS = 400 V , f = 1.0 MHz -
VGS = 0 V
VDS = 0 V to 400 Vc
-
Coss eff. (ER)
VDS = 0 V to 400 Vd
-
Internal Gate Resistance
RG
f = 1 MHz, open drain
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
ID = 23 A, VDS = 400 V
-
Qgs
Qgd
VGS = 10 V
see fig. 6 and 13b
-
-
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 250 V, ID = 23 A
-
-
Rg = 6.0, VGS = 10 V
-
see fig. 10b
-
Drain-Source Body Diode Characteristics
3600
-
380
-
37
-
4800
-
pF
100
-
220
-
160
-
1.2
-
-
150
-
44
nC
-
72
26
-
94
-
ns
53
-
45
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
23
A
-
-
92
Body Diode Voltage
VSD
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C
TJ = 125 °C
IF = 23 A,
-
170 250
ns
-
220 330
Qrr
TJ = 25 °C
TJ =1 25 °C
dI/dt = 100 A/μsb
-
560 840
μC
-
980 1500
Reverse Recovery Current
IRRM
TJ = 25 °C
-
7.6
11
A
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising fom 0 % to 80 % VDS.
d. Coss eff. (ER) is a fixed capacitance that stores the same energy time as Coss while VDS is rising fom 0 % to 80 % VDS.
www.vishay.com
2
Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 