IRFP23N50L(2011) 查看數據表（PDF） - Vishay Semiconductors
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IRFP23N50L Datasheet PDF : 11 Pages
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IRFP23N50L, SiHFP23N50L
Vishay Siliconix
100000
10000
1000
VGS = 0 V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
100
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
25
20
15
10
5
0
0 100 200 300 400 500 600
VDS , Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(ON)
100
10us
100us
10
1ms
TC = 25 °C
TJ = 150 °C
1 Single Pulse
10
100
10ms
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig. 7 - Maximum Safe Operating Area
12 ID = 23
10
7
VDS = 400 V
VDS = 250 V
VDS = 100 V
5
2
0
0
24
48
72
96
120
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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