IRFU12N25DPBF 查看數據表（PDF） - Kersemi Electronic Co., Ltd.
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IRFU12N25DPBF Datasheet PDF : 10 Pages
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IRFR/U12N25DPbF
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
100
Coss
10
1
Crss
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID = 8.4A
10
VDS = 200V
VDS = 125V
VDS = 50V
7
5
2
0
0
5
10
15
20
25
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100.00
TJ = 175°C
10.00
1.00
TJ = 25°C
0.10
0.0
VGS = 0V
1.0
2.0
3.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
1msec
10msec
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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