DATA SHEET
SEMICONDUCTOR
KBP200~KBP210
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE
GLASS PASSIVATED BRIDGE RECTIFIE
VOLTAGE RANGE-50 to 1000 Volts CURRENT-2.0 Amperes
FEATURES
•Ideal for printed circuit board
•Surge overload rating: 60 Amperes peak
•High temperature soldering : 260OC / 10 seconds at terminals
•Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
MECHANICAL DATA
•Case:Molded plastic
•Epoxy: UL 94V-0 rate flame retardant
•Lead: MIL-STD-202E,Method 208 guaranteed
•Polarity: Symbols molded or marked on body
•Mounting position: Any
•Weight: 2.74 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
•Ratings at 25 ℃ ambient temperature unless otherwise specified.
•Single phase, half wave, 60 Hz, resistive or inductive load.
•For capacitive load, derate current by 20%.
KBP Unit:inch(mm)
.600 (15.2)
.560 (14.2)
.46 (11.7)
AC
.42 (10.7)
.
.034 (0.86) DIA.
.028 (0.71) TYP
1.0
(1.4)
.50
(12.7)MIN
(15.2)MIN
.160 (4.1)
.140 (3.6)
.153 (3.9)
.130 (3.3)
SYMBOL KBP200 KBP201 KBP202 KBP204 KBP206 KBP208 KBP210 UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Bridge Input Voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
Volts
Maximum Average Forward Output TA = 50℃
IO
2.0
Amps
Peak Forward Surge Current 8.3 ms single half
IFSM
sine-wave
60
Amps
superimposed on rated load (JEDEC method)
Maximum Forward Voltage Drop per element at 1.0A
VF
DC
1.0
Volts
Maximum DC Reverse Current at
@TA = 25℃
Rated DC Blocking Voltage per
element
IR
@TA = 100℃
5
µAmp
500
I2t Rating for Fusing(t<8.3ms)
I2t
10
A2Sec
Typical Junction Capacitance(Note1)
CJ
15
pF
Operating Temperature Range
TJ
-55 to + 150
℃
Storage Temperature Range
TSTG
-55 to + 150
℃
NOTES: 1.Measured at 1 MHz and applied reverse voltage of 4.0 volts
2.Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B with 0.47x0.47”(12x12mm)copperpads.
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1
REV.03 20130130