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KBU8D 查看數據表(PDF) - General Semiconductor

零件编号
产品描述 (功能)
生产厂家
KBU8D
GE
General Semiconductor GE
KBU8D Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTICS CURVES KBU8A THRU KBU8M
FIG. 1 - DERATING CURVE OUTPUT RECTIFIED
CURRENT
8.0
HEAT-SINK MOUNTING,TC
3.0 x 3.0 x 12”THK AL. PLATE
(7.5 x 0.3cm)
6.0
4.0
P.C.B. MOUNTING, TA
2.0 0.375” (9.5mm) LEAD LENGTH
0.5 x 0.5” (12 x 12mm) COPPER PADS
60 HZ RESISTIVE OR INDUCTIVE LOAD
0
0
50
100
TEMPERATURE, °C
150
300
250
200
150
100
50
0
1
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
SINGLE SINE-WAVE
(JEDEC Method)
TJ=150°C
1.0 CYCLE
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
100
10
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
1
0.1
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS PER LEG
50
10
TJ=100°C
1
0.1
TJ=25°C
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
PER LEG
400
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
100
10
1
10
100
REVERSE VOLTAGE, VOLTS

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