Philips Semiconductors
General purpose double diode
Product specification
BAV23S
handbook1, 0ha2lfpage
IR
(µA)
10
(1)
(2)
1
MBG381
10 1
10 2
0
100
Tj (oC)
200
(1) VR = 200 V; maximum values.
(2) VR = 200 V; typical values.
Fig.5 Reverse current as a function of junction
temperature.
1.0
handbook, halfpage
Cd
(pF)
0.8
MBG447
0.6
0.4
0.2
0
2
4
6 VR (V) 8
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
RS = 50 Ω
V = VR IF x R S
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
R i = 50 Ω
VR
MGA881
tr
tp
10%
90%
input signal
t
IF
t rr
t
(1)
output signal
(1) IR = 3 mA.
1999 May 05
Fig.7 Reverse recovery voltage test circuit and waveforms.
5