LS350 查看數據表（PDF） - Linear Technology
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LS350 Datasheet PDF : 2 Pages
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MATCHING CHARACTERISTICS
SYMBOL
CHARACTERISTICS
|VBE1-VBE2|
Base Emitter Voltage Differential
∆|(VBE1-VBE2)|/°C
|IB1- IB2|
|∆(IB1- IB2)|/°C
hFE1/hFE2
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
Base Current Differential
Change with Temperature
DC Current Gain Differential
LS350
1
5
2
20
LS351
0.4
1.0
1
10
LS352
0.2
0.5
0.5
2
TYP.
MAX.
TYP.
MAX.
UNITS
mV
mV
µV/°C
µV/°C
5
5
MAX. nA
0.5
0.3 MAX. nA/°C
10
5
5
TYP. %
CONDITIONS
IC = 10 µA
VCE = 5V
IC= 10 µA
VCE = 5V
TA = -55°C to +125°C
IC = 10µA
VCE = 5V
IC= 10 µA,
VCE = 5V
TA = -55°C to +125°C
IC = 10µA
VCE = 5V
TO-71
Six Lead
0.195 DIA.
0.175
0.030
MAX.
0.230 DIA.
0.209
0.150
0.115
6 LEADS
0.019 DIA.
0.016
0.500 MIN.
0.100
0.050
234
1
5
8
6
45°
7
0.046
0.036
0.048
0.028
TO-78
0.016
0.019
DIM. A
0.335
0.370
0.305
0.335
MAX.
0.040 0.165
0.185
MIN. 0.500
0.016
0.021
DIM. B
0.029
0.045
0.200
SEATING
PLANE
0.100
2 34
1
5
8 76
0.100
45°
0.028
0.034
0.320 (8.13)
0.290 (7.37)
P-DIP
C1 1
0.405
(10.29) B1 2
MAX. E1 3
N/C 4
8 C2
7 B2
6 E2
5 N/C
SOIC
0.150 (3.81)
0.158 (4.01)
0.188 (4.78)
0.197 (5.00)
C1 1
B1 2
E1 3
N/C 4
8 C2
7 B2
6 E2
5 N/C
0.228 (5.79)
0.244 (6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
3. For LS350: VCB= 20V; for LS351 & LS352: VCB= 30V.
4. For LS351: VCC= ±45V; for LS352: VCC= ±80V; for LS350: VCC= ±25V.
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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