LT1001CN8 查看數據表（PDF） - Linear Dimensions Semiconductor

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LT1001CN8

Precision Operational Amplifier

Linear Dimensions Semiconductor 

LT1001

APPLICATIONS INFORMATION

Offset Voltage Adjustment

The input offset voltage of the LT1001, and its drift with

temperature, are permanently trimmed at wafer test to a

low level. However, if further adjustment of Vos is neces-

sary, nulling with a 10k or 20k potentiometer will not

degrade drift with temperature. Trimming to a value other

than zero creates a drift of (Vos/300)µV/°C, e.g., if Vos is

Improved Sensitivity Adjustment

7.5k

1k

+15V

1 7.5k

2–

8

INPUT

LT1001

3+

7

OUTPUT

6

4

–15V

1001 F02

adjusted to 300 µV, the change in drift will be 1 µV/°C. The

adjustment range with a 10k or 20k pot is approximately

±2.5mV. If less adjustment range is needed, the sensitivity

and resolution of the nulling can be improved by using a

smaller pot in conjunction with fixed resistors. The ex-

ample below has an approximate null range of ±100 µV.

0.1Hz to 10Hz Noise Test Circuit

0.1µF

100kΩ

10Ω –

LT1001

+

DEVICE

UNDER

TEST

VOLTAGE GAIN = 50,000

(PEAK-TO-PEAK NOISE MEASURED IN 10 SEC INTERVAL)

2kΩ

4.7 µF

+

LT1001

–

100k

24.3k

0.1 µF

4.3k

2.2µF

22µF

SCOPE

×1

RIN = 1MΩ

110k

1001 F03

The device under test should be warmed up for three

minutes and shielded from air currents.

2.2µF

TANTALUM

RIN

1k

10k

INPUT

15pF

DC Stabilized 1000v/µsec Op Amp

3.9k

300Ω

2N5486

1N914

0.01µF

1k

30k

–15V

3+

6

LT1001

2–

30k

200Ω* 200pF

2N5160

33Ω

1.8k

2N3866

0.001µF

470Ω

390Ω

2N3904

2N3904

0.01µF

22Ω

2N3866

2N5160 2N3906

0.1µF

+15V

22µF TANTALUM

2N4440

0.5Ω

0.5Ω

2N4440

OUTPUT

15-60pF

TUSONIX # 519-3188

3.9k

1N914

1k

Rf

200pF

300Ω

200Ω*

FULL POWER

BANDWIDTH 8MHz

22µF TANTALUM

1.2k

0.1µF

–15V

*ADJUST FOR

BEST SQUARE WAVE

AT OUTPUT

1001 F04

1001fb

7

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