MMDJ-65608EV-45 查看數據表（PDF） - Atmel Corporation

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MMDJ-65608EV-45

Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM

Atmel Corporation 

Data Retention Characteristics

Typical

Parameter

Description Minimum TA = 25 °C Maximum

Unit

VCCDR

VCC for data

retention

2.0

–

–

V

Chip

deselect to

TCDR

data

0.0

–

retention

time

–

ns

Operation

TR

recovery

TAVAV(1)

–

–

ns

time

Data

ICCDR1(2)

retention

current at

–

2.0V

0.1

150

µA

Data

ICCDR2(2)

retention

current at

–

3.0V

0.2

200

µA

Notes: 1. TAVAV = Read Cycle Time

2. CS1 = VCC or CS2 = CS1 = GND, Vin = GND/VCC, this parameter is only tested at

VCC = 2V.

Write Cycle

Symbol

Parameter

65608-30

65608-45

Unit

Value

TAVAW

Write cycle time

30

45

ns

min

TAVWL

Address set-up time

0

0

ns

min

TAVWH

Address valid to end of

write

22

35

ns

min

TDVWH

Data set-up time

18

20

ns

min

TE1LWH

CS1 low to write end

22

35

ns

min

TE2HWH

CS2 high to write end

22

35

ns

min

TWLQZ

Write low to high Z(1)

8

15

ns

max

TWLWH

Write pulse width

22

35

ns

min

TWHAX

Address hold from to

end of write

0

0

ns

min

TWHDX

Data hold time

0

0

ns

min

TWHQX

Write high to low Z(1)

0

0

ns

min

Note: 1. Parameters guaranteed, not tested, with output loading 5 pF.

7 M65608E

4151I–AERO–03/04

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