M66258FP 查看數據表（PDF） - Renesas Electronics

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M66258FP

8192 × 8-Bit Line Memory

Renesas Electronics 

M66258FP

8192 × 8-Bit Line Memory

REJ03F0252-0200

Rev.2.00

Sep 14, 2007

Description

The M66258FP is high speed line memory that uses high performance silicon gate CMOS process technology and

adopts the FIFO (First In First Out) structure consisting of 8192 words × 8 bits.

The M66258FP, performing reading and writing operations at different cycles independently and asynchronously, is

optimal for buffer memory to be used between equipment of different data processing speeds.

Features

• Memory configuration:

8192 words × 8 bits configuration

• High speed cycle:

20 ns (Min)

• High speed access:

16 ns (Max)

• Output hold:

3 ns (Min)

• Reading and writing operations can be completely carried out independently and asynchronously

• Variable length delay bit

• Input/output:

TTL direct connection allowable

• Output:

3 states

Application

Digital copying machine, laser beam printer, high speed facsimile, etc.

Block Diagram

Data inputs

D0 to D7

13 14 15 16 21 22 23 24

Data outputs

Q0 to Q7

1 2 3 4 9 10 11 12

Input buffer

Output buffer

WE 20

Write

enable input

WRES 19

Write

reset input

WCK 17

Write

clock input

VCC 18

Memory array

8192 × 8 bits

5 RE

Read

enable input

6 RRES

Read

reset input

8 RCK

Read

clock input

7 GND

REJ03F0252-0200 Rev.2.00 Sep 14, 2007

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