M81703FP 查看數據表（PDF） - MITSUBISHI ELECTRIC
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M81703FP Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTORS <HVIC>
M81703FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=VBS (=VB–VS)=VDD=15V, LGND=0V unless otherwise specified)
Symbol
IFS
IBS
ICC
IDD
VOH
VOL
VIH15
VIL15
VIH5
VIL5
IIH
IIL
VBSuvr
VBSuvh
tVBSuv
VCCuvr
VCCuvh
tVCCuv
IOH
IOL
ROH
ROL
tdLH(HO)
tdHL(HO)
trH
tfH
tdLH(LO)
tdHL(LO)
trL
tfL
∆tdLH
∆tdHL
Parameter
Test conditions
Floating Supply Leakage Current
VBS standby Current
VCC standby Current
VDD standby Current
High Level Output Voltage
Low Level Output Voltage
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
High Level Input Bias Current
Low Level Input Bias Current
VBS Supply UV Reset Voltage
VBS Supply UV Hysteresis Voltage
VBS Supply UV Filter Time
VCC Supply UV Reset Voltage
VCC Supply UV Hysteresis Voltage
VCC Supply UV Filter Time
Output High Level Short Circuit Pulsed Current
Output Low Level Short Circuit Pulsed Current
Output High Level On resistance
Output Low Level On resistance
High Side Turn-On Propagation Delay
High Side Turn-Off Propagation Delay
High Side Turn-On Rise Time
High Side Turn-Off Fall Time
Low Side Turn-On Propagation Delay
Low Side Turn-Off Propagation Delay
Low Side Turn-On Rise Time
Low Side Turn-Off Fall Time
Delay Matching, High Side and Low Side Turn-On
Delay Matching, High Side and Low Side Turn-Off
VB=VS=600V
IO=0A, LO, HO
IO=0A, LO, HO
HIN, LIN
HIN, LIN
HIN, LIN (VDD=5V)
HIN, LIN (VDD=5V)
VIN=15V
VIN=0V
VO=0V, VIN=15V, PW<10µs
VO=15V, VIN=0V, PW<10µs
IO=–200mA, ROH=(VOH-VO)/IO
IO=200mA, ROL=VO/IO
CL=1000pF between HO – VS
CL=1000pF between HO – VS
CL=1000pF between HO – VS
CL=1000pF between HO – VS
CL=1000pF between LO – GND
CL=1000pF between LO – GND
CL=1000pF between LO – GND
CL=1000pF between LO – GND
|tdLH(HO)-tdLH(LO)|
|tdHL(HO)-tdHL(LO)|
Limits
Min.
Typ.
Max.
Unit
—
—
1
µA
—
0.4
0.7
mA
—
0.75
1.5
mA
—
—
10
µA
13.8
14.4
—
V
—
—
0.1
V
—
8.4
9.5
V
6.0
6.8
—
V
—
3.1
4.1
V
1.4
2.4
—
V
—
75
150
µA
—
—
1.0
µA
7.5
8.6
9.7
V
0.1
0.4
0.7
V
—
10
—
µs
7.5
8.6
9.7
V
0.1
0.4
0.7
V
—
10
—
µs
—
–2.5
—
A
—
2.5
—
A
—
10
13
Ω
—
2.5
3
Ω
—
—
350
ns
—
—
330
ns
—
—
60
ns
—
—
30
ns
—
—
350
ns
—
—
330
ns
—
—
60
ns
—
—
30
ns
—
—
30
ns
—
—
30
ns
Mar. 2002
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