MBR0520 查看數據表（PDF） - Vishay Semiconductors
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MBR0520 Datasheet PDF : 5 Pages
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MBR0520
Vishay High Power Products Schottky Diode, 0.5 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum reverse leakage current IRM (1)
Maximum junction capacitance
Maximum voltage rate of change
CT
dV/dt
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
TEST CONDITIONS
0.1 A
0.5 A
TJ = 25 °C
0.1 A
0.5 A
TJ = 100 °C
TJ = 25 °C
TJ = 100 °C
VR = 10 V
TJ = 25 °C
TJ = 100 °C
VR = 20 V
VR = 5 VDC (test signal range 100 kHz to 1 MHz) TJ = 25 °C
Rated VR
VALUES
0.375
0.440
0.260
0.360
40
3
150
7
110
10 000
UNITS
V
µA
mA
µA
mA
pF
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
TJ (1), TStg
RthJL
Mounted on PC board FR4 with minimum pad size
Maximum thermal resistance,
junction to ambient
RthJA
1" square pad size (1 x 0.5" for each lead) on FR4 board
Approximate weight
Marking device
Case style SOD-123
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES
- 65 to 150
UNITS
°C
150
°C/W
200
0.012
g
AYWLC
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93434
Revision: 22-Aug-08
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