MBR10100CT 查看數據表（PDF） - Shenzhen Ping Sheng Electronics Co., Ltd.
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MBR10100CT Datasheet PDF : 2 Pages
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MBR1080CT THRU MBR10100CT
Features
• Metal of siliconrectifier, majonty carrier conducton
• Guard ring for transient protection
• Low power loss high efficiency
• High surge capacity, High current capability
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +175°C
Microsemi
Device Maximum
Catalog
Marking Recurrent
Number
Peak
Reverse
Voltage
MBR1080CT MBR1080CT 80V
MBR10100CT MBR10100CT 100V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
56V
80V
70V
100V
10 Amp
Schottky Barrier
Rectifier
80-100 Volts
TO-220AB
B
L
M
C
D
K
A
E
PIN
12 3
F
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
IF(AV)
IFSM
VF
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
10A TC = 100°C
120A 8.3ms, half sine
.85V
.75V
IFM = 5A
TJ = 25°C
TJ = 125°C
0.2mA TJ = 25°C
15mA TJ = 125°C
Typical Junction
Capacitance
CJ
300pF Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
I
HH
PIN 1
PIN 3
G
J
N
PIN 2
CASE
INCHES
MM
A
.560
.625
14.22 15.88
B
.380
.420
9.65
10.67
C
.100
.135
2.54
3.43
D
.230
.270
5.84
6.86
E
.380
.420
9.65
10.67
F
------
.250
------
6.35
G
.500
.580
12.70
14.73
H
.090
.110
2.29
2.79
I
.020
.045
0.51
1.14
J
.012
.025
0.30
0.64
K
.139
.161
3.53
4.09
L
.140
.190
3.56
4.83
M
.045
.055
1.14
1.40
N
.080
.115
2.03
2.92
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