MBR130T3(2001) 查看數據表（PDF） - ON Semiconductor

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MBR130T3
(Rev.:2001)

Surface Mount Schottky Power Rectifier

ON Semiconductor 

MBR130T1, MBR130T3

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Ambient (Note 1.)

Thermal Resistance, Junction to Lead (Note 1.)

ELECTRICAL CHARACTERISTICS

Characteristic

Maximum Instantaneous Forward Voltage (Note 2.)

(IF = 0.1 A, TJ = 25°C)

(IF = 0.7 A, TJ = 25°C)

(IF = 1.0 A, TJ = 25°C)

Maximum Instantaneous Reverse Current (Note 2.)

(Rated dc Voltage, TC = 25°C)

(VR = 5 V, TC = 25°C)

1. FR–4 or FR–5 = 3.5 × 1.5 inches using a 1 inch Cu pad.

2. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2%.

Symbol

RθJA

RθJL

Symbol

VF

IR

Value

230

108

Typ

Max

–

0.35

–

0.45

0.47

–

60

10

Unit

°C/W

°C/W

Unit

V

mA

10

10

1

TJ = 125°C

1

TJ = 125°C

75°C 25°C

0.1

0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65

VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 1. Maximum Forward Voltage

75°C 25°C

0.1

0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65

VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 2. Typical Forward Voltage

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