MBR3100 查看數據表（PDF） - ON Semiconductor
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MBR3100 Datasheet PDF : 4 Pages
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MBR3100
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient (see Note 3, Mounting Method 3)
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 3.0 Amps, TL = 25°C)
(iF = 3.0 Amps, TL = 100°C)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
TL = 25°C
TL = 100°C
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Symbol
Max
Unit
RqJA
28
°C/W
Symbol
Max
Unit
vF
V
0.79
0.69
iR
mA
0.6
20
50
30
20
10
TJ = 150°C
5
100°C
3
25°C
2
1
0.5
0.3
0.2
0.1
0.05
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1
0.5
0.2
TJ = 150°C
0.1
0.05
125°C
0.02
0.01
100°C
0.005
0.002
0.001
0.0005
0.0002
25°C
0.0001
0
10 20 30 40 50 60 70 80 90 100
VR REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if VR is sufficient below rated VR.
8
7
6
5
4
dc
SQUARE
3
WAVE
2
1
0
20 40 60 80 100 120 140 160 180
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Current Derating
(Mounting Method #3 per Note 3)
4
3.5
3
2.5
SQUARE
2
WAVE
dc
1.5
1
0.5
0
1.0
2.0
3.0
4.0
5.0
IF (AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Power Dissipation
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