MBRB2535CTL 查看數據表（PDF） - ON Semiconductor
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MBRB2535CTL Datasheet PDF : 5 Pages
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MBRB2535CTL
MAXIMUM RATINGS (Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, (Rated VR, TC = 110°C)
Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 90°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
35
V
12.5
A
25
A
150
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
1.0
A
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temperature
TJ
−65 to +125
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient (Note 1)
RqJC
RqJA
1.0
°C/W
84
ELECTRICAL CHARACTERISTICS (Per Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 25 A, TJ = 25°C)
(iF = 12.5 A, TJ = 125°C)
(iF = 12.5 A, TJ = 25°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
1. When mounted using minimum recommended pad size on FR−4 board.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
vF
V
0.55
0.41
0.47
IR
mA
500
10
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