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MBRB2535CT 查看數據表(PDF) - General Semiconductor

零件编号
产品描述 (功能)
生产厂家
MBRB2535CT
GE
General Semiconductor GE
MBRB2535CT Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES MBRB2535CT THRU MBRB2560CT
FIG. 1 - FORWARD CURRENT DERATING CURVE
30
RESISTIVE OR INDUCTIVE LOAD
24
18
150
125
100
75
50
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT PER LEG
TC=130°C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
12
25
6
0
0
50
100
150
CASE TEMPERATURE, °C
0
1
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
10
TJ=150°C
TJ=25°C
1
MBRB2535CT - MBRB2545CT
MBRB2550CT & MBRB2560CT
0.1
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
PER LEG
50
10
TJ=125°C
1
0.1
0.01
TJ=75°C
MBRB2535CT - MBRB2545CT
MBRB2550CT & MBRB2560CT
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
TJ=25°C
0.001
0
20
40
60
80 100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
5,000
FIG. 5 - TYPICAL JUNCTION CAPACITANCE PER LEG
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
100
1,000
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
10
1
MBRB2535CT - MBRB2545CT
MBRB2550CT & MBRB2560CT
100
0.1
1
10
100
0.1
REVERSE VOLTAGE, VOLTS
0.01
0.1
1
10
100
t, PULSE DURATION, sec.

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