MBRD320 查看數據表（PDF） - Vishay Semiconductors

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产品描述 (功能)

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MBRD320

Schottky Rectifier, 3.0 A

Vishay Semiconductors 

MBRD3..PbF Series

Vishay High Power Products Schottky Rectifier, 3.0 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward voltage drop

See fig. 1

VFM (1)

Maximum reverse leakage current

See fig. 2

IRM (1)

Typical junction capacitance

Typical series inductance

Maximum voltage rate of change

CT

LS

dV/dt

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

TEST CONDITIONS

3A

TJ = 25 °C

6A

3A

TJ = 125 °C

6A

TJ = 25 °C

TJ = 125 °C

VR = Rated VR

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

Measured lead to lead 5 mm from package body

Rated VR

TYP.

0.48

0.58

0.41

0.55

0.02

10.7

189

5.0

-

MAX.

0.6

0.7

0.49

0.625

0.2

20

-

-

10 000

UNITS

V

mA

pF

nH

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction temperature range TJ (1)

Maximum storage temperature range

Maximum thermal resistance,

junction to case

TStg

RthJC

DC operation

See fig. 4

Maximum thermal resistance,

junction to ambient

RthJA

Approximate weight

Marking device

Case style D-PAK (similar to TO-252AA)

Note

(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink

dTJ RthJA

VALUES

- 40 to 150

- 40 to 175

UNITS

°C

6.0

°C/W

80

0.3

g

0.01

oz.

MBRD320

MBRD330

MBRD340

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay,com

Document Number: 94313

Revision: 06-Jun-08

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