MBRD835L(2005) 查看數據表（PDF） - ON Semiconductor

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MBRD835L
(Rev.:2005)

SWITCHMODE
Power Rectifier DPAK Surface Mount Package

ON Semiconductor 

MBRD835L

TYPICAL CHARACTERISTICS

TJ = 25°C

1000

TYPICAL

MAXIMUM

100

1

10

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Maximum and Typical Capacitance

16

14.4

TJ = 125°C

12.8

dc

RqJA = 6°C/W

11.2

p (RESISTIVE LOAD)

9.6 SQUARE WAVE

8

6.4

IPK

IAV

+

5

(CAPACITIVE

LOAD)

4.8

3.2

10

1.6

20

0

80 85 90 95 100 105 110 115 120 125 130

TC, CASE TEMPERATURE (°C)

Figure 6. Current Derating, Infinite Heatsink

8

TJ = 125°C

RqJA = 40°C/W

7

dc

SURFACE MOUNTED ON

6

MINIMUM RECOMMENDED

PAD SIZE

5 p (RESISTIVE LOAD)

4

SQUARE WAVE

IPK

IAV

+

5

(CAPACITIVE

LOAD)

3

2

10

1

20

0

0 10 20 30 40 50 60 70 80 90 100 110 120 130

TA, AMBIENT TEMPERATURE (°C)

Figure 7. Current Derating

5

4.5

dc TJ = 125°C

4p

3.5 (RESISTIVE LOAD)

3

SQUARE WAVE

2.5

RqJA = 80°C/W

SURFACE MOUNTED ON

MINIMUM RECOMMENDED

PAD SIZE

IPK

IAV

+5

(CAPACITIVE

LOAD)

2

1.5

10

1

0.5

20

0 0 10 20 30 40 50 60 70 80 90 100 110 120 130

TA, AMBIENT TEMPERATURE (°C)

Figure 8. Current Derating, Free Air

8

7

TJ = 125°C p (RESISTIVE LOAD)

6

IPK

IAV

+

5

(CAPACITIVE

LOAD)

SQUARE WAVE dc

5

10

4

20

3

2

1

0

0 1.5 3 4.5 6 7.5 9 10.5 12 13.5 15

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

Figure 9. Forward Power Dissipation

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