MG800J1US52A 查看數據表（PDF） - MITSUBISHI ELECTRIC
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MG800J1US52A Datasheet PDF : 7 Pages
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SW time - RG
104
7
5
3
toff
ton
2
td(off)
103
7
5
3
2
td(on) tf tr
102
7
5
Common emitter
3 VCC = 300V
2 IC = 800A
VGE = ±15V
101
0
4
8
Tj = 25°C
Tj = 125°C
12
16
GATE RESISTANCE RG (Ω)
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
0
SW loss - RG
Eon
Eoff
Common emitter
VCC = 300V
IC = 800A
VGE = ±15V
Tj = 25°C
Tj = 125°C
4
8
12
16
GATE RESISTANCE RG (Ω)
Irr, trr - RG
103
7
5
trr
3
2
102
7 Common emitter
5 VCC = 300V
3 IC = 800A
Irr
2
VGE = ±15V
Tj = 25°C
Tj = 125°C
101
0
5
10
15
20
GATE RESISTANCE RG (Ω)
MITSUBISHI IGBT MODULES
MG800J1US52A
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
SW time - IC
104
7
5
3
2
103
7
5 ton
3
2
102
7
5
3
2
101
0
toff
td(off)
td(on)
tr
Tj = 25°C
Tj = 125°C
tf Common emitter
VCC = 300V
RG = 2Ω
VGE = ±15V
200
400
600
800
COLLECTOR CURRENT IC (A)
SW loss - IC
102
7
Eoff
5
3
2
101
7
5
3
2
100
0
Eon
Common emitter
VCC = 300V
RG = 2Ω
VGE = ±15V
Tj = 25°C
Tj = 125°C
200
400
600
800
COLLECTOR CURRENT IC (A)
Irr, trr - IF
103
7
5
Irr
3
2
102
7
5
3
2
101
0
trr
200
Common emitter
VCC = 300V
RG = 2Ω
VGE = ±15V
Tj = 25°C
Tj = 125°C
400
600
800
FORWARD CURRENT IF (A)
Dec.2005
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