Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
零件编号
产品描述 (功能)
MG800J1US52A 查看數據表(PDF) - MITSUBISHI ELECTRIC
零件编号
产品描述 (功能)
生产厂家
MG800J1US52A
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
MITSUBISHI ELECTRIC
MG800J1US52A Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
SW time - R
G
10
4
7
5
3
t
off
t
on
2
t
d(off)
10
3
7
5
3
2
t
d(on)
t
f
t
r
10
2
7
5
Common emitter
3
V
CC
= 300V
2
I
C
= 800A
V
GE
=
±
15V
10
1
0
4
8
T
j
= 25
°
C
T
j
= 125
°
C
12
16
GATE RESISTANCE R
G
(
Ω
)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0
SW loss - R
G
E
on
E
off
Common emitter
V
CC
= 300V
I
C
= 800A
V
GE
=
±
15V
T
j
= 25
°
C
T
j
= 125
°
C
4
8
12
16
GATE RESISTANCE R
G
(
Ω
)
I
rr
, t
rr
- R
G
10
3
7
5
t
rr
3
2
10
2
7
Common emitter
5
V
CC
= 300V
3
I
C
= 800A
I
rr
2
V
GE
=
±
15V
T
j
= 25
°
C
T
j
= 125
°
C
10
1
0
5
10
15
20
GATE RESISTANCE R
G
(
Ω
)
MITSUBISHI IGBT MODULES
MG800J1US52A
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
SW time - I
C
10
4
7
5
3
2
10
3
7
5
t
on
3
2
10
2
7
5
3
2
10
1
0
t
off
t
d(off)
t
d(on)
t
r
T
j
= 25
°
C
T
j
= 125
°
C
t
f
Common emitter
V
CC
= 300V
R
G
= 2
Ω
V
GE
=
±
15V
200
400
600
800
COLLECTOR CURRENT I
C
(A)
SW loss - I
C
10
2
7
E
off
5
3
2
10
1
7
5
3
2
10
0
0
E
on
Common emitter
V
CC
= 300V
R
G
= 2
Ω
V
GE
=
±
15V
T
j
= 25
°
C
T
j
= 125
°
C
200
400
600
800
COLLECTOR CURRENT I
C
(A)
I
rr
, t
rr
- I
F
10
3
7
5
I
rr
3
2
10
2
7
5
3
2
10
1
0
t
rr
200
Common emitter
V
CC
= 300V
R
G
= 2
Ω
V
GE
=
±
15V
T
j
= 25
°
C
T
j
= 125
°
C
400
600
800
FORWARD CURRENT I
F
(A)
Dec.2005
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]