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MGSF2N02ELT3 查看數據表(PDF) - ON Semiconductor

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MGSF2N02ELT3 Datasheet PDF : 6 Pages
1 2 3 4 5 6
MGSF2N02EL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 10 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Source Leakage Current (VGS = $ 8.0 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate−Source Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
0.5
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 3.6 A)
(VGS = 2.5 Vdc, ID = 3.1 A)
RDS(on)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 5.0 Vdc, VGS = 0 V,
f = 1.0 MHz)
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
(VDD = 16 Vdc, ID = 2.8 Adc,
Vgs = 4.5 V, RG = 2.3 W)
tr
td(off)
Fall Time
tf
Gate Charge
(VDS = 16 Vdc, ID = 1.75 Adc,
VGS = 4.0 Vdc) (Note 3)
QT
Qgs
Qgd
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward Voltage
VSD
(IS = 1.0 Adc, VGS = 0 Vdc) (Note 3)
Reverse Recovery Time
(IS = 1.0 Adc, VGS = 0 Vdc,
dlS/ dt = 100 A/ms) (Note 3)
trr
ta
tb
Reverse Recovery Stored Charge
QRR
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
22
mV/°C
mAdc
1.0
10
"100
nA
1.0
Vdc
−2.3
mV/°C
mW
78
85
105
115
150
pF
130
45
6.0
ns
95
28
125
3.5
nC
0.6
1.5
V
0.76
1.2
104
ns
42
62
0.20
mC
ORDERING INFORMATION
Device
Package
Shipping
MGSF2N02ELT1
SOT−23
3,000 Tape & Reel
MGSF2N02ELT1G
SOT−23
(Pb−Free)
3,000 Tape & Reel
MGSF2N02ELT3
SOT−23
10,000 Tape & Reel
MGSF2N02ELT3G
SOT−23
(Pb−Free)
10,000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2

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