MJ3001 查看數據表（PDF） - Unspecified

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MJ3001

Medium-power complementary Silicon Transistors

Unspecified 

MJ2501 & MJ3001

10A, 150W, 80V

Features:

• Medium-power complementary Silicon Transistors for use as output devices in

complementary general purpose amplifier applications.

• High DC Current Gain

hFE = 1000 (Typical) at IC = 5.0A.

• Monolithic construction with built Base-Emitter Shunt Resistors.

Pin 1. Base

2. Emitter

Collector(Case)

Dimensions

A

B

C

D

E

F

G

H

I

J

K

Minimum

Maximum

38.75

19.28

7.96

11.18

25.20

0.92

1.38

29.90

16.64

3.88

10.57

39.96

22.23

9.28

12.19

26.67

1.09

1.62

30.40

17.30

4.36

11.16

Dimensions : Millimetres

PNP NPN

MJ2501 MJ3001

10 Ampere

Darlington

Power Transistors

Complementary Silicon

80 Volts

150 Watts

TO-3

Maximum Ratings

Characteristic

Collector-Emitter Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

-Peak

Base Current

Total Power Dissipation at TC = 25°C

Derate above 25°C

Operating and Storage Junction Temperature Range

Symbol

VCEO

VCEX

VEBO

IC

IB

PD

TJ, TSTG

MJ2501/MJ3001

80

5.0

10

12

0.2

150

0.857

-55 to +200

Unit

V

A

W

W/°C

°C

Page 1

31/05/05 V1.0

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