MJD112(1997) 查看數據表（PDF） - STMicroelectronics

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MJD112
(Rev.:1997)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

STMicroelectronics 

MJD112

MJD117

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

s SGS-THOMSON PREFERRED SALESTYPES

s LOW BASE-DRIVE REQUIREMENTS

s INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

s SURFACE-MOUNTING TO-252 (DPAK)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

s ELECTRICAL SIMILAR TO TIP112 AND

TIP117

APPLICATIONS

s GENERAL PURPOSE SWITCHING AND

AMPLIFIER

DESCRIPTION

The MJD112 and MJD117 form complementary

PNP - NPN pairs.

They are manufactured using Epitaxial Base

technology for cost-effective performance.

3

1

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Par am e te r

VCBO Collector-Emitter Voltage (IE = 0)

VCEO Collector-Emitter Voltage (IB = 0)

VEBO Emitter-Base Voltage (IC = 0)

IC Collector Current

ICM Collector Peak Current (tp < 5 ms)

IB

Base Current

Ptot Tot al Dissipation at Tc = 25 oC

Tstg Storage Temperature

Tj Max. Ope rating Junction Temperature

For PNP type voltage and current values are negative.

September 1997

R1(typ) = 7KΩ

R2(typ) = 200Ω

Value

100

100

5

2

4

0.05

20

-65 to 150

150

Unit

V

V

V

A

A

A

W

oC

oC

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