MJD210G(2011) 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
MJD210G Datasheet PDF : 6 Pages
| |||
1
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.05
0.1
0.07
0.05
0.02
0.01
0.03
0 (SINGLE PULSE)
0.02
0.01
0.02
0.05
0.1
MJD200 (NPN) MJD210 (PNP)
RqJC(t) = r(t) qJC
RqJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
0.5
1
2
5
10
20
t, TIME (ms)
Figure 8. Thermal Response
50
100
200
10
5 ms
5
3
2
TJ = 150°C
100 ms
1 ms
1
500 ms
dc
0.1
0.01
0.3
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
1
2 3 5 7 10
20 30
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 9. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. TJ(pk) may be calculated from the data in
Figure 8. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
200
TJ = 25°C
Cib
100
70
50
Cob
30
MJD200 (NPN)
MJD210 (PNP)
20
0.4 0.6 1
2
4 6 10
20
40
VR, REVERSE VOLTAGE (V)
Figure 10. Capacitance
http://onsemi.com
5
Share Link: 