DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MJD41C 查看數據表(PDF) - Weitron Technology

零件编号
产品描述 (功能)
生产厂家
MJD41C
Weitron
Weitron Technology Weitron
MJD41C Datasheet PDF : 5 Pages
1 2 3 4 5
MJD41C
ELECTRICAL CHARACTERISTICS(TA=25˚C unless otherwise noted)
Parameter
Symbol
Min
Collector-Base Breakdown Voltage
IC=0.1mA
Collector-Emitter Breakdown Voltage
IC=30mA
Emitter-Base Breakdown Voltage
IE=0.1mA
BVCBO
100
BVCEO
100
BVEBO
5.0
VCB=60V
VEB =5.0V
ICEO
-
IEBO
-
Typ Max Unit
-
-
V
-
-
V
-
-
V
-
50
µA
-
0.5
mA
ON CHARACTERISTICS
DC Current Gain
VCE=4V, IC=0.3A
VCE=4V, IC=3A
Collector-Emitter Saturation Voltage
IC=6A, IB=0.6A
Base-Emitter Voltage
VCE=4V, IC=6A
Transition frequency
VCE=10V, IC =0.5A, f=1MHz
hFE(1)
30
hFE(2)
15
VCE(sat)
-
VBE
-
fT
3
-
-
-
-
75
-
1.5
V
-
2
V
-
-
MHz
WEITRON
2/5
http://www.weitron.com.tw
19-Nov-09

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]